Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor

AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress

AlGaN/GaN High Electron Mobility Transistors (HEMTs) with various gate lengths have been stepstressed under both onand off-state conditions. On-state, high power stress tests were performed on 0.17 lm gate length HEMTs and a single 5 lm spaced TLM pattern. Significant degradation of the submicron HEMTs as compared to the excellent stability of the TLM patterns under the same stress conditions r...

MOCVD growth of GaN-based high electron mobility transistor structures

Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

AlGaN/GaN high electron mobility transistor (HEMT) structures are grown on 200-mm diameter Si(111) substrates by using three different buffer layer configurations: (a) Thick-GaN/3 × {AlxGa1-xN}/AlN, (b) Thin-GaN/3 × {AlxGa1-xN}/AlN, and (c) Thin-GaN/AlN, so as to have crack-free and low-bow (<50 μm) wafer. Scanning electron microscopy, energy-dispersive X-ray spectroscopy, high resolution-cross...

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...